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Difference in EUV photoresist design towards reduction of LWR and LCDU

dc.contributor.authorJiang, Jing
dc.contributor.authorDe Simone, Danilo
dc.contributor.authorVandenberghe, Geert
dc.date.accessioned2021-10-24T06:22:05Z
dc.date.available2021-10-24T06:22:05Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28603
dc.sourceIIOimport
dc.titleDifference in EUV photoresist design towards reduction of LWR and LCDU
dc.typeProceedings paper
dc.contributor.imecauthorDe Simone, Danilo
dc.contributor.imecauthorVandenberghe, Geert
dc.contributor.orcidimecDe Simone, Danilo::0000-0003-3927-5207
dc.identifier.doi10.1117/12.2257899
dc.source.peerreviewyes
dc.source.beginpage101460A
dc.source.conferenceAdvances in Patterning Materials and Processes XXXIV
dc.source.conferencedate27/02/2017
dc.source.conferencelocationSan Jose, CA USA
imec.availabilityPublished - imec
imec.internalnotesProceedings of SPIE; Vol. 10146


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