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Statistical characterization and modeling of drain current local and global variability in 14nm FinFETs

dc.contributor.authorKaratsori, T.
dc.contributor.authorTheodorou, C.
dc.contributor.authorLavieville, R.
dc.contributor.authorChiarella, Thomas
dc.contributor.authorMitard, Jerome
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorDimitriadis, C.A
dc.contributor.authorGhibaudo, Gérard
dc.date.accessioned2021-10-24T06:38:28Z
dc.date.available2021-10-24T06:38:28Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28641
dc.sourceIIOimport
dc.titleStatistical characterization and modeling of drain current local and global variability in 14nm FinFETs
dc.typeProceedings paper
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage5
dc.source.conferenceInternational Conference of Microelectronic Test Structures - ICMTS
dc.source.conferencedate28/03/2017
dc.source.conferencelocationGrenoble France
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7954263/
imec.availabilityPublished - imec


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