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Back-gate bias effect on FDSOI MOSFET RF figures of merits and parasitic elements

dc.contributor.authorKazemi Esfeh, Babak
dc.contributor.authorKilchytska, Valeria
dc.contributor.authorParvais, Bertrand
dc.contributor.authorPlanes, N.
dc.contributor.authorHaond, M
dc.contributor.authorFlandre, D
dc.contributor.authorRaskin, J.-P.
dc.date.accessioned2021-10-24T06:42:41Z
dc.date.available2021-10-24T06:42:41Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28651
dc.sourceIIOimport
dc.titleBack-gate bias effect on FDSOI MOSFET RF figures of merits and parasitic elements
dc.typeProceedings paper
dc.contributor.imecauthorKazemi Esfeh, Babak
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage228
dc.source.endpage230
dc.source.conferenceJoint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - EUROSOI-ULIS
dc.source.conferencedate3/04/2017
dc.source.conferencelocationAthens Greece
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7962569/
imec.availabilityPublished - open access


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