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2D MoS2 film thickness impact on the efficiency of surface-doped devices

dc.contributor.authorLockhart de la Rosa, Cesar Javier
dc.contributor.authorArutchelvan, Goutham
dc.contributor.authorLeonhardt, Alessandra
dc.contributor.authorHuyghebaert, Cedric
dc.contributor.authorRadu, Iuliana
dc.contributor.authorHeyns, Marc
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-24T08:09:34Z
dc.date.available2021-10-24T08:09:34Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28845
dc.sourceIIOimport
dc.title2D MoS2 film thickness impact on the efficiency of surface-doped devices
dc.typeMeeting abstract
dc.contributor.imecauthorLockhart de la Rosa, Cesar Javier
dc.contributor.imecauthorArutchelvan, Goutham
dc.contributor.imecauthorLeonhardt, Alessandra
dc.contributor.imecauthorHuyghebaert, Cedric
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecHuyghebaert, Cedric::0000-0001-6043-7130
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewyes
dc.source.beginpage2.5
dc.source.conference48th IEEE Semiconductor Interface Specialists Conference - SISC
dc.source.conferencedate6/12/2017
dc.source.conferencelocationSan Diego, CA USA
dc.identifier.urlhttp://www.ieeesisc.org/programs/2017_SISC_technical_program.pdf
imec.availabilityPublished - imec
imec.internalnotes


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