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Epitaxial CVD growth of ultra-thin Si passivation layers on Ge using Si4H10 to enable growth temperatures down to 330 °C

dc.contributor.authorLoo, Roger
dc.contributor.authorVanherle, Wendy
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorCott, Daire
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorDouhard, Bastien
dc.contributor.authorMitard, Jerome
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2021-10-24T08:14:48Z
dc.date.available2021-10-24T08:14:48Z
dc.date.issued2017-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28855
dc.sourceIIOimport
dc.titleEpitaxial CVD growth of ultra-thin Si passivation layers on Ge using Si4H10 to enable growth temperatures down to 330 °C
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVanherle, Wendy
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage73
dc.source.endpage74
dc.source.conference10th International Conference on Silicon Epitaxy and heterostructures
dc.source.conferencedate14/05/2017
dc.source.conferencelocationCoventry UK
imec.availabilityPublished - imec


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