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Epitaxial CVD growth of ultra-thin Si passivation layers on Ge using Si4H10 to enable growth temperatures down to 330 °C
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1873 since deposited on 2021-10-24
Acq. date: 2025-12-17
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Views
1873 since deposited on 2021-10-24
Acq. date: 2025-12-17
Citations