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Epitaxial CVD growth of ultra-thin Si passivation layers on Ge using Si4H10 to enable growth temperatures down to 330 °C

Date

2017-05
Proceedings Paper
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dc.contributor.authorLoo, Roger
dc.contributor.authorVanherle, Wendy
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorCott, Daire
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorDouhard, Bastien
dc.contributor.authorMitard, Jerome
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVanherle, Wendy
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-24T08:14:48Z
dc.date.available2021-10-24T08:14:48Z
dc.date.issued2017-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28855
dc.source.beginpage73
dc.source.conference10th International Conference on Silicon Epitaxy and heterostructures
dc.source.conferencedate14/05/2017
dc.source.conferencelocationCoventry UK
dc.source.endpage74
dc.title

Epitaxial CVD growth of ultra-thin Si passivation layers on Ge using Si4H10 to enable growth temperatures down to 330 °C

dc.typeProceedings paper
dspace.entity.typePublication
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