Publication:
Epitaxial CVD growth of ultra-thin Si passivation layers on Ge using Si4H10 to enable growth temperatures down to 330 °C
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1877 since deposited on 2021-10-24
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Acq. date: 2026-04-06
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Statistics
Views
1877 since deposited on 2021-10-24
2last month
2last week
Acq. date: 2026-04-06
Citations