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Electromigration-induced drift in damascene vs. conventional interconnects: an intrinsic difference

dc.contributor.authorProost, Joris
dc.contributor.authorSamajdar, I.
dc.contributor.authorWitvrouw, Ann
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-01T08:44:37Z
dc.date.available2021-10-01T08:44:37Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2887
dc.sourceIIOimport
dc.titleElectromigration-induced drift in damascene vs. conventional interconnects: an intrinsic difference
dc.typeProceedings paper
dc.contributor.imecauthorMaex, Karen
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage89
dc.source.endpage94
dc.source.conferenceMaterials Reliability in Microelectronics VIII
dc.source.conferencedate13/04/1998
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 516


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