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Hot-carrier degradation in FinFETs: modeling, peculiarities, and impact of device topology

dc.contributor.authorMakarov, A
dc.contributor.authorTyaginov, Stanislaw
dc.contributor.authorKaczer, Ben
dc.contributor.authorJech, M.
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorGrill, A.
dc.contributor.authorHellings, Geert
dc.contributor.authorVexler, M.
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGrasser, Tibor
dc.date.accessioned2021-10-24T08:33:52Z
dc.date.available2021-10-24T08:33:52Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28895
dc.sourceIIOimport
dc.titleHot-carrier degradation in FinFETs: modeling, peculiarities, and impact of device topology
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage310
dc.source.endpage313
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate2/12/2017
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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