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Interaction between hot carrier aging and PBTI degradation in nMOSFETs: characterization, modelling and lifetime prediction

dc.contributor.authorMeng, D.
dc.contributor.authorZhang, J. F.
dc.contributor.authorZhang, J. C.
dc.contributor.authorZhang, W.
dc.contributor.authorJi, Z.
dc.contributor.authorBenbakhti, B.
dc.contributor.authorZheng, X. F.
dc.contributor.authorHao, Y.
dc.contributor.authorVigar, D.
dc.contributor.authorAdamu-Lema, F.
dc.contributor.authorChandra, V.
dc.contributor.authorAitken, R.
dc.contributor.authorKaczer, Ben
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorAsenov, A.
dc.date.accessioned2021-10-24T09:08:16Z
dc.date.available2021-10-24T09:08:16Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28963
dc.sourceIIOimport
dc.titleInteraction between hot carrier aging and PBTI degradation in nMOSFETs: characterization, modelling and lifetime prediction
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageXT-5.1
dc.source.endpageXT-5.7
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate2/04/2017
dc.source.conferencelocationMonterey, CA USA
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7936419/
imec.availabilityPublished - open access


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