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Atom probe conditions for stoichiometric quantification of GaN and Al1 xGaxN

dc.contributor.authorMorris, Richard
dc.contributor.authorArnoldi, Laurent
dc.contributor.authorCuduvally, Ramya
dc.contributor.authorMelkonyan, Davit
dc.contributor.authorFleischmann, Claudia
dc.contributor.authorZhao, Ming
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-24T09:38:26Z
dc.date.available2021-10-24T09:38:26Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29022
dc.sourceIIOimport
dc.titleAtom probe conditions for stoichiometric quantification of GaN and Al1 xGaxN
dc.typeOral presentation
dc.contributor.imecauthorMorris, Richard
dc.contributor.imecauthorCuduvally, Ramya
dc.contributor.imecauthorFleischmann, Claudia
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecMorris, Richard::0000-0002-0902-7088
dc.contributor.orcidimecFleischmann, Claudia::0000-0003-1531-6916
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.source.peerreviewno
dc.source.conference21st International Conference on Secondary Ion Mass spectrometry - SIMS
dc.source.conferencedate10/09/2017
dc.source.conferencelocationKrakow Poland
dc.identifier.urlhttp://sims.confer.uj.edu.pl/boa_poster.php?id=169
imec.availabilityPublished - imec
imec.internalnotesRM-Tue-P60


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