Show simple item record

Correlative 3D strain analysis in nanometer-sized semiconductor devices by precession electron diffraction, raman spectroscopy and FE simulations

dc.contributor.authorNanakoudis, Antonis
dc.contributor.authorNuytten, Thomas
dc.contributor.authorBender, Hugo
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorBals, Sara
dc.contributor.authorVerbeeck, Jo
dc.date.accessioned2021-10-24T10:02:33Z
dc.date.available2021-10-24T10:02:33Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29067
dc.sourceIIOimport
dc.titleCorrelative 3D strain analysis in nanometer-sized semiconductor devices by precession electron diffraction, raman spectroscopy and FE simulations
dc.typeProceedings paper
dc.contributor.imecauthorNuytten, Thomas
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecNuytten, Thomas::0000-0002-5921-6928
dc.source.peerreviewno
dc.source.conferenceMicroscopy of Semiconducting Materials - MSM XX
dc.source.conferencedate9/04/2017
dc.source.conferencelocationOxford UK
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record