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Failure probability of a FinFET-based SRAM cell utilizing the most probable failure point

dc.contributor.authorNoltsis, Michalis
dc.contributor.authorMaragkoudaki, Eleni
dc.contributor.authorRodopoulos, Dimitrios
dc.contributor.authorCatthoor, Francky
dc.contributor.authorSoudris, Dimitrios
dc.date.accessioned2021-10-24T10:12:08Z
dc.date.available2021-10-24T10:12:08Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29086
dc.sourceIIOimport
dc.titleFailure probability of a FinFET-based SRAM cell utilizing the most probable failure point
dc.typeProceedings paper
dc.contributor.imecauthorCatthoor, Francky
dc.contributor.orcidimecCatthoor, Francky::0000-0002-3599-8515
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage8
dc.source.conference27th International Symposium on Power and Timing Modeling, Optimization and Simulation - PATMOS
dc.source.conferencedate25/09/2017
dc.source.conferencelocationThessaloniki Greece
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8106967/
imec.availabilityPublished - open access


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