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Variability study with CD-SEM metrology for STT-MRAM: correlation analysis between physical dimensions and electrical property of the memory element

dc.contributor.authorOhashi, Takeyoshi
dc.contributor.authorYamaguchi, Atsuko
dc.contributor.authorHasumi, Kazuhisa
dc.contributor.authorInoue, Osamu
dc.contributor.authorIkota, Masami
dc.contributor.authorLorusso, Gian
dc.contributor.authorDonadio, Gabriele Luca
dc.contributor.authorYasin, Farrukh
dc.contributor.authorRao, Siddharth
dc.contributor.authorKar, Gouri Sankar
dc.date.accessioned2021-10-24T10:21:48Z
dc.date.available2021-10-24T10:21:48Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29104
dc.sourceIIOimport
dc.titleVariability study with CD-SEM metrology for STT-MRAM: correlation analysis between physical dimensions and electrical property of the memory element
dc.typeProceedings paper
dc.contributor.imecauthorLorusso, Gian
dc.contributor.imecauthorDonadio, Gabriele Luca
dc.contributor.imecauthorYasin, Farrukh
dc.contributor.imecauthorRao, Siddharth
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecYasin, Farrukh::0000-0002-7295-0254
dc.contributor.orcidimecRao, Siddharth::0000-0001-6161-3052
dc.date.embargo9999-12-31
dc.identifier.doi10.1117/12.2257908
dc.source.peerreviewyes
dc.source.beginpage101450H
dc.source.conferenceMetrology, Inspection, and Process Control for Microlithography XXXI
dc.source.conferencedate26/02/2017
dc.source.conferencelocationSan Jose, CA USA
imec.availabilityPublished - open access
imec.internalnotesProceedings of SPIE; Vol. 10145


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