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Experimental comparison between relaxed and strained Ge pFinFETs

dc.contributor.authorOliveira, Alberto
dc.contributor.authorAgopian, P.G.D.
dc.contributor.authorMartino, Joao A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorCollaert, Nadine
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-24T10:23:29Z
dc.date.available2021-10-24T10:23:29Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29107
dc.sourceIIOimport
dc.titleExperimental comparison between relaxed and strained Ge pFinFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage180
dc.source.endpage183
dc.source.conferenceJoint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - EUROSOI-ULIS
dc.source.conferencedate3/04/2017
dc.source.conferencelocationAthens Greece
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7962576/
imec.availabilityPublished - open access


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