Show simple item record

Gas-phase surface proessing prior to 3.2nm gate oxidation

dc.contributor.authorRuzyllo, Jerzy
dc.contributor.authorRöhr, Erika
dc.contributor.authorBaeyens, Martien
dc.contributor.authorBearda, Twan
dc.contributor.authorMertens, Paul
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-01T08:50:32Z
dc.date.available2021-10-01T08:50:32Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2920
dc.sourceIIOimport
dc.titleGas-phase surface proessing prior to 3.2nm gate oxidation
dc.typeOral presentation
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.source.peerreviewno
dc.source.conference4th International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS
dc.source.conferencedate21/09/1998
dc.source.conferencelocationOostende Belgium
imec.availabilityPublished - imec
imec.internalnotesPubl. in 1999; Zie C3754


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record