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Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 resistive random access memory

dc.contributor.authorPuglisi, F.M.
dc.contributor.authorCelano, Umberto
dc.contributor.authorPadovani, A.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLarcher, Luca
dc.contributor.authorPavan, P.
dc.date.accessioned2021-10-24T11:29:13Z
dc.date.available2021-10-24T11:29:13Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29226
dc.sourceIIOimport
dc.titleScaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 resistive random access memory
dc.typeProceedings paper
dc.contributor.imecauthorCelano, Umberto
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecCelano, Umberto::0000-0002-2856-3847
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpagePM-8.1
dc.source.endpagePM-8.5
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate2/04/2017
dc.source.conferencelocationMonterey, CA USA
imec.availabilityPublished - open access


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