Show simple item record

dc.contributor.authorRosseel, Erik
dc.contributor.authorKohen, David
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorPorret, Clément
dc.contributor.authorLoo, Roger
dc.contributor.authorTolle, John
dc.contributor.authorVandooren, Anne
dc.contributor.authorVeloso, Anabela
dc.contributor.authorCollaert, Nadine
dc.contributor.authorMocuta, Dan
dc.contributor.authorLanger, Robert
dc.date.accessioned2021-10-24T12:25:57Z
dc.date.available2021-10-24T12:25:57Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29325
dc.sourceIIOimport
dc.titleHighly doped low-temperature Si:P growth for source/drain formation in advanced Si nFETs
dc.typeMeeting abstract
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorLanger, Robert
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.source.peerreviewno
dc.source.beginpageM6.4
dc.source.conferencee-MRS Fall Meeting
dc.source.conferencedate18/09/2017
dc.source.conferencelocationWarsaw Poland
imec.availabilityPublished - imec
imec.internalnoteshttps://www.european-mrs.com/material-and-device-integration-silicon-advanced-applications-emrs


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record