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Stress engineered AlN/AlGaN superlattices as high-voltage current blocking layers on 200 mm Silicon
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Stress engineered AlN/AlGaN superlattices as high-voltage current blocking layers on 200 mm Silicon
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Date
2017
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Su, Jie
;
Liang, Hu
;
Posthuma, Niels
;
Wellekens, Dirk
;
Decoutere, Stefaan
;
Lee, Soo Min
;
Paranjpe, Ajit
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Views
1863
since deposited on 2021-10-24
1
last month
1
last week
Acq. date: 2025-12-12
Citations