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Stress engineered AlN/AlGaN superlattices as high-voltage current blocking layers on 200 mm Silicon

dc.contributor.authorSu, Jie
dc.contributor.authorLiang, Hu
dc.contributor.authorPosthuma, Niels
dc.contributor.authorWellekens, Dirk
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorLee, Soo Min
dc.contributor.authorParanjpe, Ajit
dc.date.accessioned2021-10-24T14:21:28Z
dc.date.available2021-10-24T14:21:28Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29515
dc.sourceIIOimport
dc.titleStress engineered AlN/AlGaN superlattices as high-voltage current blocking layers on 200 mm Silicon
dc.typeMeeting abstract
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpageE6
dc.source.conference59th Electronic Materials Conference
dc.source.conferencedate28/06/2017
dc.source.conferencelocationSouth Bend, IN USA
dc.identifier.urlhttps://www.mrs.org/docs/default-source/meetings-events/mrs-conference-services/59th-EMC/preliminary-programs.pdf?sfvrsn=26
imec.availabilityPublished - imec


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