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Diode assessment of material characteristics in internally gettered and non-gettered Czochralski silicon: problems, pitfalls and guidelines

dc.contributor.authorSimoen, Eddy
dc.contributor.authorPoyai, Amporn
dc.contributor.authorClaeys, Cor
dc.contributor.authorCzerwinski, A.
dc.contributor.authorGaubas, Eugenijus
dc.date.accessioned2021-10-01T08:56:56Z
dc.date.available2021-10-01T08:56:56Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2953
dc.sourceIIOimport
dc.titleDiode assessment of material characteristics in internally gettered and non-gettered Czochralski silicon: problems, pitfalls and guidelines
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage42
dc.source.endpage51
dc.source.conference2nd International Conference on Materials for Microelectronics - ICMM
dc.source.conferencedate14/09/1998
dc.source.conferencelocationBordeaux France
imec.availabilityPublished - open access


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