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Nanometer-deep junctions with high doping concentration for Ge SDEs using solid-source doping and flash lamp annealing

dc.contributor.authorTanimura, Hideaki
dc.contributor.authorFuse, Kazuhiko
dc.contributor.authorYamada, Takahiro
dc.contributor.authorAoyama, Takayuki
dc.contributor.authorKato, Shinichi
dc.contributor.authorKobayashi, Ippei
dc.contributor.authorBlanquart, Timothee
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2021-10-24T14:46:42Z
dc.date.available2021-10-24T14:46:42Z
dc.date.issued2017-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29554
dc.sourceIIOimport
dc.titleNanometer-deep junctions with high doping concentration for Ge SDEs using solid-source doping and flash lamp annealing
dc.typeProceedings paper
dc.contributor.imecauthorBlanquart, Timothee
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage15
dc.source.endpage18
dc.source.conference17th International Workshop on Junction Technology - IWJT
dc.source.conferencedate1/06/2017
dc.source.conferencelocationKyoto Japan
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7966501/
imec.availabilityPublished - open access


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