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BTI reliability and time-dependent variability of stacked gate-all-around Si nanowire transistors

dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorWeckx, Pieter
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorMertens, Hans
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorLinten, Dimitri
dc.contributor.authorRzepa, Gerhard
dc.date.accessioned2021-10-24T15:27:32Z
dc.date.available2021-10-24T15:27:32Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29618
dc.sourceIIOimport
dc.titleBTI reliability and time-dependent variability of stacked gate-all-around Si nanowire transistors
dc.typeProceedings paper
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorWeckx, Pieter
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage5C-4.1
dc.source.endpage5C-4.7
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate2/04/2017
dc.source.conferencelocationMonterey, CA USA
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7936422/
imec.availabilityPublished - open access


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