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Wafer shape based in-plane distortion predictions using superfast 4G metrology

dc.contributor.authorVan Dijk, Leon
dc.contributor.authorMileham, Jeffrey
dc.contributor.authorMalakhovsky, Ilja
dc.contributor.authorLaidler, David
dc.contributor.authorDekkers, Harold
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorAnberg, Doug
dc.contributor.authorOwen, David M.
dc.contributor.authorvan Haren, Richard
dc.date.accessioned2021-10-24T15:57:21Z
dc.date.available2021-10-24T15:57:21Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29666
dc.sourceIIOimport
dc.titleWafer shape based in-plane distortion predictions using superfast 4G metrology
dc.typeProceedings paper
dc.contributor.imecauthorLaidler, David
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorvan Haren, Richard
dc.contributor.orcidimecLaidler, David::0000-0003-4055-3366
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.embargo9999-12-31
dc.identifier.doi10.1117/12.2257475
dc.source.peerreviewyes
dc.source.beginpage101452L
dc.source.conferenceMetrology, Inspection, and Process Control for Microlithography XXXI,
dc.source.conferencedate31/01/2017
dc.source.conferencelocationSan Jose, CA USA
imec.availabilityPublished - open access
imec.internalnotesProceedings of SPIE; Vol. 101452


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