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ALD as an enabler of self-aligned multiple patterning schemes

dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorTao, Zheng
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorDemuynck, Steven
dc.contributor.authorAltamirano Sanchez, Efrain
dc.date.accessioned2021-10-24T16:02:41Z
dc.date.available2021-10-24T16:02:41Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29674
dc.sourceIIOimport
dc.titleALD as an enabler of self-aligned multiple patterning schemes
dc.typeProceedings paper
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorTao, Zheng
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.source.peerreviewyes
dc.source.beginpage142
dc.source.endpage142
dc.source.conferenceAVS 17th International Conference on Atomic Layer Deposition - ALD
dc.source.conferencedate15/07/2017
dc.source.conferencelocationDenver USA
imec.availabilityPublished - imec


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