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Self-aligned fin cut last patterning scheme for fin arrays of 24nm pitch and beyond

dc.contributor.authorBaudot, Sylvain
dc.contributor.authorSoussou, Assawer
dc.contributor.authorMilenin, Alexey
dc.contributor.authorErvin, Joe
dc.contributor.authorDemuynck, Steven
dc.date.accessioned2021-10-25T16:40:49Z
dc.date.available2021-10-25T16:40:49Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30217
dc.sourceIIOimport
dc.titleSelf-aligned fin cut last patterning scheme for fin arrays of 24nm pitch and beyond
dc.typeOral presentation
dc.contributor.imecauthorBaudot, Sylvain
dc.contributor.imecauthorSoussou, Assawer
dc.contributor.imecauthorMilenin, Alexey
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.orcidimecMilenin, Alexey::0000-0003-0747-0462
dc.source.peerreviewno
dc.source.conferenceSPIE Advanced Lithography
dc.source.conferencedate24/02/2019
dc.source.conferencelocationSan Jose, CA USA
dc.identifier.urlhttps://www.spie.org/AL/conferencedetails/advances-resist-patterning-materials-processes
imec.availabilityPublished - imec


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