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Defect avoidance for extreme-ultraviolet mask defects using intentional pattern deformation

dc.contributor.authorChae, Yoo-jin
dc.contributor.authorJonckheere, Rik
dc.contributor.authorGupta, Puneet
dc.date.accessioned2021-10-25T17:06:39Z
dc.date.available2021-10-25T17:06:39Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30378
dc.sourceIIOimport
dc.titleDefect avoidance for extreme-ultraviolet mask defects using intentional pattern deformation
dc.typeProceedings paper
dc.contributor.imecauthorJonckheere, Rik
dc.contributor.orcidimecJonckheere, Rik::0000-0003-2211-9443
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage108091H
dc.source.conferenceInternational Conference on Extreme Ultraviolet Lithography
dc.source.conferencedate17/09/2018
dc.source.conferencelocationMonterey, CA USA
dc.identifier.urlhttps://doi.org/10.1117/12.2501525
imec.availabilityPublished - open access
imec.internalnotesProceedings of SPIE; Vol. 10809


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