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Vertical ferroelectric HfO2 FET based on 3-D NAND architecture: towards dense low-power memory

dc.contributor.authorFlorent, Karine
dc.contributor.authorPesic, Milan
dc.contributor.authorSubirats, Alexandre
dc.contributor.authorBanerjee, Kaustuv
dc.contributor.authorLavizzari, Simone
dc.contributor.authorArreghini, Antonio
dc.contributor.authorDi Piazza, Luca
dc.contributor.authorPotoms, Goedele
dc.contributor.authorSebaai, Farid
dc.contributor.authorMcMitchell, Sean
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-25T18:41:09Z
dc.date.available2021-10-25T18:41:09Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30713
dc.sourceIIOimport
dc.titleVertical ferroelectric HfO2 FET based on 3-D NAND architecture: towards dense low-power memory
dc.typeProceedings paper
dc.contributor.imecauthorBanerjee, Kaustuv
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorDi Piazza, Luca
dc.contributor.imecauthorPotoms, Goedele
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorMcMitchell, Sean
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecBanerjee, Kaustuv::0000-0001-8003-6211
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewyes
dc.source.beginpage43
dc.source.endpage46
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate1/12/2018
dc.source.conferencelocationSan Francisco, CA USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8614710
imec.availabilityPublished - imec


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