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Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space

dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorBury, Erik
dc.contributor.authorLinten, Dimitri
dc.date.accessioned2021-10-25T18:44:43Z
dc.date.available2021-10-25T18:44:43Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30723
dc.sourceIIOimport
dc.titleHot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space
dc.typeProceedings paper
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorBury, Erik
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecBury, Erik::0000-0002-5847-3949
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage5A.1-1
dc.source.endpage5A.1-7
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate11/03/2018
dc.source.conferencelocationBurlingame, CA USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8353601/
imec.availabilityPublished - open access


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