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Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space
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Authors
Franco, Jacopo
;
Kaczer, Ben
;
Vaisman Chasin, Adrian
;
Bury, Erik
;
Linten, Dimitri
Conference
IEEE International Reliability Physics Symposium - IRPS
Title
Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space
Publication type
Proceedings paper
Embargo date
9999-12-31
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