Publication:
Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space
Date
Loading...
Files
Journal
Abstract
Description
Statistics
Views
1897 since deposited on 2021-10-25
2last month
Acq. date: 2026-04-06
Citations
Statistics
Views
1897 since deposited on 2021-10-25
2last month
Acq. date: 2026-04-06
Citations