Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space

dc.contributor.author	Franco, Jacopo
dc.contributor.author	Kaczer, Ben
dc.contributor.author	Vaisman Chasin, Adrian
dc.contributor.author	Bury, Erik
dc.contributor.author	Linten, Dimitri
dc.contributor.imecauthor	Franco, Jacopo
dc.contributor.imecauthor	Kaczer, Ben
dc.contributor.imecauthor	Vaisman Chasin, Adrian
dc.contributor.imecauthor	Bury, Erik
dc.contributor.imecauthor	Linten, Dimitri
dc.contributor.orcidimec	Franco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimec	Kaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimec	Vaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimec	Bury, Erik::0000-0002-5847-3949
dc.contributor.orcidimec	Linten, Dimitri::0000-0001-8434-1838
dc.date.accessioned	2021-10-25T18:44:43Z
dc.date.available	2021-10-25T18:44:43Z
dc.date.embargo	9999-12-31
dc.date.issued	2018
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/30723
dc.identifier.url	https://ieeexplore.ieee.org/document/8353601/
dc.source.beginpage	5A.1-1
dc.source.conference	IEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate	11/03/2018
dc.source.conferencelocation	Burlingame, CA USA
dc.source.endpage	5A.1-7
dc.title	Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space
dc.type	Proceedings paper
dspace.entity.type	Publication
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