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dc.contributor.authorGao, Weimin
dc.contributor.authorWiaux, Vincent
dc.contributor.authorHoppe, Wolfgang
dc.contributor.authorPhilipsen, Vicky
dc.contributor.authorMelvin, Lawrence
dc.contributor.authorHendrickx, Eric
dc.contributor.authorLucas, Kevin
dc.contributor.authorKim, Ryan Ryoung han
dc.date.accessioned2021-10-25T18:51:27Z
dc.date.available2021-10-25T18:51:27Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30741
dc.sourceIIOimport
dc.titleDouble patterning at NA 0.33 versus high-NA single exposure in EUV lithography: an imaging comparison
dc.typeProceedings paper
dc.contributor.imecauthorGao, Weimin
dc.contributor.imecauthorWiaux, Vincent
dc.contributor.imecauthorPhilipsen, Vicky
dc.contributor.imecauthorHendrickx, Eric
dc.contributor.imecauthorKim, Ryan Ryoung han
dc.contributor.orcidimecPhilipsen, Vicky::0000-0002-2959-432X
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage105830O
dc.source.conferenceExtreme Ultraviolet (EUV) Lithography IX
dc.source.conferencedate26/02/2018
dc.source.conferencelocationSan Jose, CA USA
dc.identifier.urlhttps://doi.org/10.1117/12.2297677
imec.availabilityPublished - open access
imec.internalnotesProceedings of SPIE; Vol.10583


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