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Epitaxial growth and characterization of P-GaN gated HEMT on compliant poly-AlN substrate for e-mode power devices

dc.contributor.authorGuo, Weiming
dc.contributor.authorGeens, Karen
dc.contributor.authorZhao, Ming
dc.contributor.authorBehmenburg, Hannes
dc.contributor.authorFahle, Dirk
dc.contributor.authorOdnoblyudov, Vlad
dc.contributor.authorBasceri, Cem
dc.contributor.authorAktas, Ozgur
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-25T19:21:09Z
dc.date.available2021-10-25T19:21:09Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30819
dc.sourceIIOimport
dc.titleEpitaxial growth and characterization of P-GaN gated HEMT on compliant poly-AlN substrate for e-mode power devices
dc.typeMeeting abstract
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpageGR12-7
dc.source.conferenceInternational Workshop on Nitride Semiconductors - IWN
dc.source.conferencedate11/11/2018
dc.source.conferencelocationKanazawa Japan
dc.identifier.urlhttp://www.iwn2018.jp/IWN2018-Program.pdf
imec.availabilityPublished - imec


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