dc.contributor.author | Hellings, Geert | |
dc.contributor.author | Chen, Shih-Hung | |
dc.contributor.author | Scholz, Mirko | |
dc.contributor.author | Simicic, Marko | |
dc.contributor.author | Schram, Tom | |
dc.contributor.author | Ragnarsson, Lars-Ake | |
dc.contributor.author | Horiguchi, Naoto | |
dc.contributor.author | Linten, Dimitri | |
dc.date.accessioned | 2021-10-25T19:40:30Z | |
dc.date.available | 2021-10-25T19:40:30Z | |
dc.date.issued | 2018 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/30869 | |
dc.source | IIOimport | |
dc.title | On ESD gate dielectric reliability in 14nm finFET and horizontal NW technology | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Hellings, Geert | |
dc.contributor.imecauthor | Chen, Shih-Hung | |
dc.contributor.imecauthor | Simicic, Marko | |
dc.contributor.imecauthor | Schram, Tom | |
dc.contributor.imecauthor | Ragnarsson, Lars-Ake | |
dc.contributor.imecauthor | Horiguchi, Naoto | |
dc.contributor.imecauthor | Linten, Dimitri | |
dc.contributor.orcidimec | Hellings, Geert::0000-0002-5376-2119 | |
dc.contributor.orcidimec | Simicic, Marko::0000-0002-3623-1842 | |
dc.contributor.orcidimec | Schram, Tom::0000-0003-1533-7055 | |
dc.contributor.orcidimec | Ragnarsson, Lars-Ake::0000-0003-1057-8140 | |
dc.contributor.orcidimec | Horiguchi, Naoto::0000-0001-5490-0416 | |
dc.contributor.orcidimec | Linten, Dimitri::0000-0001-8434-1838 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | B.6 | |
dc.source.conference | International Electrostatic Discharge Workshop - IEW | |
dc.source.conferencedate | 14/05/2018 | |
dc.source.conferencelocation | Oud-Turnhout Belgium | |
imec.availability | Published - open access | |