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Influence of composition of SiCN for surface activated bonding

dc.contributor.authorInoue, Fumihiro
dc.contributor.authorPeng, Lan
dc.contributor.authorIacovo, Serena
dc.contributor.authorPhommahaxay, Alain
dc.contributor.authorVisker, Jakob
dc.contributor.authorVerdonck, Patrick
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorDara, Praveen
dc.contributor.authorSleeckx, Erik
dc.contributor.authorMiller, Andy
dc.contributor.authorBeyne, Eric
dc.date.accessioned2021-10-25T20:10:42Z
dc.date.available2021-10-25T20:10:42Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30939
dc.sourceIIOimport
dc.titleInfluence of composition of SiCN for surface activated bonding
dc.typeProceedings paper
dc.contributor.imecauthorInoue, Fumihiro
dc.contributor.imecauthorPeng, Lan
dc.contributor.imecauthorIacovo, Serena
dc.contributor.imecauthorPhommahaxay, Alain
dc.contributor.imecauthorVisker, Jakob
dc.contributor.imecauthorVerdonck, Patrick
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorDara, Praveen
dc.contributor.imecauthorSleeckx, Erik
dc.contributor.imecauthorMiller, Andy
dc.contributor.imecauthorBeyne, Eric
dc.contributor.orcidimecPeng, Lan::0000-0003-1824-126X
dc.contributor.orcidimecIacovo, Serena::0000-0002-0826-9165
dc.contributor.orcidimecVerdonck, Patrick::0000-0003-2454-0602
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecDara, Praveen::0000-0002-2334-3976
dc.contributor.orcidimecSleeckx, Erik::0000-0003-2560-6132
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage159
dc.source.endpage168
dc.source.conferenceSemiconductor Wafer Bonding: Science, Technology, and Applications 15
dc.source.conferencedate30/09/2018
dc.source.conferencelocationCancun Mexico
dc.identifier.urlhttp://ecst.ecsdl.org/content/86/5/159.abstract
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 86, Iissue 5


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