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Blank defect coverage budget for 16nm half-pitch single EUV exposure

dc.contributor.authorJonckheere, Rik
dc.contributor.authorYamane, Takeshi
dc.contributor.authorMorikawa, Yasutaka
dc.contributor.authorKamo, Takashi
dc.date.accessioned2021-10-25T20:26:25Z
dc.date.available2021-10-25T20:26:25Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30975
dc.sourceIIOimport
dc.titleBlank defect coverage budget for 16nm half-pitch single EUV exposure
dc.typeProceedings paper
dc.contributor.imecauthorJonckheere, Rik
dc.contributor.orcidimecJonckheere, Rik::0000-0003-2211-9443
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage108070H
dc.source.conferencePhotomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology
dc.source.conferencedate18/04/2018
dc.source.conferencelocationYokohama Japan
dc.identifier.urlhttp://spie.org/Publications/Proceedings/Paper/10.1117/12.2502792
imec.availabilityPublished - open access
imec.internalnotesSPIE Proceedings; Vol. 10807


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