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Selective wet etching in fabricating SiGe and Ge nanowires for gate-all-around MOSFETs

dc.contributor.authorLiu, W.D.
dc.contributor.authorLee, Y.C.
dc.contributor.authorSekiguchi, R.
dc.contributor.authorYoshida, Y.
dc.contributor.authorKomori, K.
dc.contributor.authorWostyn, Kurt
dc.contributor.authorSebaai, Farid
dc.contributor.authorHolsteyns, Frank
dc.date.accessioned2021-10-25T22:16:53Z
dc.date.available2021-10-25T22:16:53Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31208
dc.sourceIIOimport
dc.titleSelective wet etching in fabricating SiGe and Ge nanowires for gate-all-around MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.source.peerreviewyes
dc.source.beginpage101
dc.source.endpage106
dc.source.conferenceUltra Clean Processing of Semiconductor Surfaces XIV - UCPSS
dc.source.conferencedate3/09/2018
dc.source.conferencelocationLeuven Belgium
dc.identifier.urlhttps://doi.org/10.4028/www.scientific.net/SSP.282.101
imec.availabilityPublished - imec
imec.internalnotesSolid State Phenomena; Vol. 282


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