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Epitaxial growth schemes for fin and Gate All Around devices

dc.contributor.authorLoo, Roger
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRosseel, Erik
dc.contributor.authorPorret, Clément
dc.contributor.authorVohra, Anurag
dc.contributor.authorKohen, David
dc.contributor.authorMargetis, Joe
dc.contributor.authorTolle, John
dc.contributor.authorLanger, Robert
dc.date.accessioned2021-10-25T22:28:05Z
dc.date.available2021-10-25T22:28:05Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31230
dc.sourceIIOimport
dc.titleEpitaxial growth schemes for fin and Gate All Around devices
dc.typeMeeting abstract
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorLanger, Robert
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.source.peerreviewyes
dc.source.conference11th International WorkShop on New Group IV Semiconductor Nanoelectronics
dc.source.conferencedate23/02/2018
dc.source.conferencelocationSendai Japan
imec.availabilityPublished - imec


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