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Gallium-doped SiGe and Ge via MO-RPCVD epitaxy

dc.contributor.authorMargetis, Joe
dc.contributor.authorPorret, Clément
dc.contributor.authorKumar, Raj
dc.contributor.authorPetersen Barbosa Lima, Lucas
dc.contributor.authorKohen, David
dc.contributor.authorLoo, Roger
dc.contributor.authorTolle, John
dc.date.accessioned2021-10-25T22:58:12Z
dc.date.available2021-10-25T22:58:12Z
dc.date.issued2018-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31287
dc.sourceIIOimport
dc.titleGallium-doped SiGe and Ge via MO-RPCVD epitaxy
dc.typeMeeting abstract
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorPetersen Barbosa Lima, Lucas
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage143
dc.source.endpage144
dc.source.conference1st Joint ISTDM/ICSI conference
dc.source.conferencedate27/05/2018
dc.source.conferencelocationPotsdam Germany
imec.availabilityPublished - imec


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