Show simple item record

Power GaN HEMT degradation: from time-dependent breakdown to hot-electron effects

dc.contributor.authorMeneghini, Matteo
dc.contributor.authorBarbato, A.
dc.contributor.authorBorga, Matteo
dc.contributor.authorDe Santi, Carlos
dc.contributor.authorBarbato, M.
dc.contributor.authorStoffels, Steve
dc.contributor.authorZhao, Ming
dc.contributor.authorPosthuma, Niels
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorHaeberlen, Oliver
dc.contributor.authorDetzel, Thomas
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.date.accessioned2021-10-25T23:22:16Z
dc.date.available2021-10-25T23:22:16Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31332
dc.sourceIIOimport
dc.titlePower GaN HEMT degradation: from time-dependent breakdown to hot-electron effects
dc.typeProceedings paper
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage703
dc.source.endpage706
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate1/12/2018
dc.source.conferencelocationSan Francisco, CA USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8614605
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record