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dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorOh, Hyungrock
dc.contributor.authorPotoms, Goedele
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorRichard, Olivier
dc.contributor.authorHody, Hubert
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorDelhougne, Romain
dc.contributor.authorGoux, Ludovic
dc.contributor.authorKar, Gouri Sankar
dc.date.accessioned2021-10-26T01:27:30Z
dc.date.available2021-10-26T01:27:30Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31553
dc.sourceIIOimport
dc.titleHigh-performance (EOT<0.4nm, Jg~10-7A/cm2) ALD-deposited Ru\SrTiO3 stack for next generations DRAM pillar capacitor
dc.typeProceedings paper
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorOh, Hyungrock
dc.contributor.imecauthorPotoms, Goedele
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorHody, Hubert
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecOh, Hyungrock::0000-0001-5244-5755
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.source.peerreviewyes
dc.source.beginpage51
dc.source.endpage54
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate1/12/2018
dc.source.conferencelocationSan Francisco, CA USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8614673
imec.availabilityPublished - imec


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