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dc.contributor.authorPorret, Clément
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorGomez Granados, Juan Fernando
dc.contributor.authorBaudot, Sylvain
dc.contributor.authorVohra, Anurag
dc.contributor.authorKunert, Bernardette
dc.contributor.authorDouhard, Bastien
dc.contributor.authorBogdanowicz, Janusz
dc.contributor.authorSchaekers, Marc
dc.contributor.authorKohen, David
dc.contributor.authorMargetis, Joe
dc.contributor.authorTolle, John
dc.contributor.authorPetersen Barbosa Lima, Lucas
dc.contributor.authorSammak, Amir
dc.contributor.authorScappucci, Giordano
dc.contributor.authorRosseel, Erik
dc.contributor.authorLanger, Robert
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-26T01:29:05Z
dc.date.available2021-10-26T01:29:05Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31555
dc.sourceIIOimport
dc.titleVery low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration
dc.typeProceedings paper
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorGomez Granados, Juan Fernando
dc.contributor.imecauthorBaudot, Sylvain
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorBogdanowicz, Janusz
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorPetersen Barbosa Lima, Lucas
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.contributor.orcidimecBogdanowicz, Janusz::0000-0002-7503-8922
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage163
dc.source.endpage175
dc.source.conferenceSiGe, Ge, and Related Materials: Materials, Processing, and Devices 8
dc.source.conferencedate30/09/2018
dc.source.conferencelocationCancun Mexico
dc.identifier.urlhttp://ecst.ecsdl.org/content/86/7/163.short
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 86, Issue 7


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