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Ga-doped Ge and [B + Ga] Co-doped SiGe epitaxial source-drain for Sub-7 nm logic devices

dc.contributor.authorPorret, Clément
dc.contributor.authorMargetis, Joe
dc.contributor.authorTolle, John
dc.contributor.authorSammak, Amir
dc.contributor.authorScappucci, Giordano
dc.contributor.authorPetersen Barbosa Lima, Lucas
dc.contributor.authorKohen, David
dc.contributor.authorKunert, Bernardette
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-26T01:29:42Z
dc.date.available2021-10-26T01:29:42Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31556
dc.sourceIIOimport
dc.titleGa-doped Ge and [B + Ga] Co-doped SiGe epitaxial source-drain for Sub-7 nm logic devices
dc.typeMeeting abstract
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorPetersen Barbosa Lima, Lucas
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.conference1st Joint ISTDM / ICSI 2018 Conference
dc.source.conferencedate27/05/2018
dc.source.conferencelocationPotsdam Germany
dc.identifier.urlhttps://www.istdm-icsi-2018.com/openconf/modules/request.php?module=oc_program&action=summary.php&id=39
imec.availabilityPublished - imec


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