Publication:

A new method to fabricate Ge nanowires: selective lateral etching of GeSn:P-Ge multi-stacks

Date

2018

Proceedings Paper

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Author(s)

Porret, Clément

;

;

;

Douhard, Bastien

;

Hikavyy, Andriy

;

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1913 since deposited on 2021-10-26

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Acq. date: 2026-02-25