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A new method to fabricate Ge nanowires: selective lateral etching of GeSn:P-Ge multi-stacks

dc.contributor.authorPorret, Clément
dc.contributor.authorVohra, Anurag
dc.contributor.authorSebaai, Farid
dc.contributor.authorDouhard, Bastien
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-26T01:30:22Z
dc.date.available2021-10-26T01:30:22Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31557
dc.sourceIIOimport
dc.titleA new method to fabricate Ge nanowires: selective lateral etching of GeSn:P-Ge multi-stacks
dc.typeProceedings paper
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage113
dc.source.endpage120
dc.source.conferenceUltra Clean Processing of Semiconductor Surfaces XIV
dc.source.conferencedate3/09/2018
dc.source.conferencelocationLeuven Belgium
dc.identifier.urlhttps://www.scientific.net/SSP.282.113
imec.availabilityPublished - imec
imec.internalnotesSolid State Phenomena; Vol. 282


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