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Defect free trench isolation for high voltage bipolar application on SOI wafer

dc.contributor.authorYindeepol, W.
dc.contributor.authorBashir, R.
dc.contributor.authorMcGregor, J. M.
dc.contributor.authorBrown, K. C.
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorDe Santis, J.
dc.contributor.authorAhmed, A.
dc.date.accessioned2021-10-01T09:51:09Z
dc.date.available2021-10-01T09:51:09Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3165
dc.sourceIIOimport
dc.titleDefect free trench isolation for high voltage bipolar application on SOI wafer
dc.typeProceedings paper
dc.contributor.imecauthorDe Wolf, Ingrid
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage151
dc.source.endpage152
dc.source.conferenceProceedings IEEE International SOI Conference
dc.source.conferencedate5/10/1998
dc.source.conferencelocationStuart, FL USA
imec.availabilityPublished - open access


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