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Vertically stacked gate-all-around Si nanowire CMOS transistors with reduced nanowires separation, new work function metal gate solutions, and DC/AC performance optimization

dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorMertens, Hans
dc.contributor.authorPena, Vanessa
dc.contributor.authorSantoro, Gaetano
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorKenis, Karine
dc.contributor.authorDevriendt, Katia
dc.contributor.authorMannaert, Geert
dc.contributor.authorDekkers, Harold
dc.contributor.authorDangol, Anish
dc.contributor.authorLin, Yongjin
dc.contributor.authorSun, Shiyu
dc.contributor.authorChen, Zhebo
dc.contributor.authorKim, Myungsun
dc.contributor.authorChen, ShiChung
dc.contributor.authorMachillot, Jerome
dc.contributor.authorMitard, Jerome
dc.contributor.authorYoshida, Naomi
dc.contributor.authorKim, Namsung
dc.contributor.authorMocuta, Dan
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-26T02:35:20Z
dc.date.available2021-10-26T02:35:20Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31661
dc.sourceIIOimport
dc.titleVertically stacked gate-all-around Si nanowire CMOS transistors with reduced nanowires separation, new work function metal gate solutions, and DC/AC performance optimization
dc.typeProceedings paper
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorPena, Vanessa
dc.contributor.imecauthorSantoro, Gaetano
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorDangol, Anish
dc.contributor.imecauthorMachillot, Jerome
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage508
dc.source.endpage511
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate2/12/2018
dc.source.conferencelocationSan Francissco, CA USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8614528
imec.availabilityPublished - imec


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