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Near hysteresis-free negative capacitance InGaAs tunnel FETs with enhanced digital and analog figures of merit below Vdd=400mV
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Near hysteresis-free negative capacitance InGaAs tunnel FETs with enhanced digital and analog figures of merit below Vdd=400mV
Date
2018-12
Proceedings Paper
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39369.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Saeidi, Ali
;
Verhulst, Anne
;
Stolichnov, Igor
;
Alian, AliReza
;
Iwai, Hiroshi
;
Collaert, Nadine
;
Ionescu, Adrian
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1876
since deposited on 2021-10-26
Acq. date: 2025-10-25
Citations
Metrics
Views
1876
since deposited on 2021-10-26
Acq. date: 2025-10-25
Citations